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ContactRF BJT Transistors(1743)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Gain Bandwidth Product | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Continuous Collector Current | Frequency (Max) | Power - Output | Highest Frequency Band | Power Dissipation-Max | JEDEC-95 Code | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | DC Current Gain-Min (hFE) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | VCEsat-Max | hFE Min | Collector-Base Capacitance-Max | Frequency - Transition | Number of Terminals |
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| NESG3031M14-T3-A | RENESAS ELECTRONICS CORP |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | [object Object] | yes | EAR99 | LOW NOISE | compliant | 8541.21.00.95 | e6 | TIN BISMUTH | YES | DUAL | FLAT | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | BIP RF Small Signal | Not Qualified | R-PDSO-F4 | SILICON GERMANIUM | SINGLE | AMPLIFIER | NPN | 0.15W | 0.035A | 4.3V | C B | 220 | 0.25pF | 4 | ||||||||||||||||||||||||||||||||||||||||||||||
| HFA3046B96 | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | Non-RoHS Compliant | EAR99 | LOW NOISE | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 240 | 14 | NOT SPECIFIED | 5 | Not Qualified | R-PDSO-G14 | SILICON | COMPLEX | AMPLIFIER | NPN | 0.037A | 8V | ULTRA HIGH FREQUENCY B | MS-012AB | 8000MHz | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA3128R | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | Non-RoHS Compliant | EAR99 | LOW NOISE | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | NO LEAD | 240 | 16 | 125°C | NOT SPECIFIED | 5 | Other Transistors | Not Qualified | S-PQCC-N16 | SILICON | SEPARATE, 5 ELEMENTS | AMPLIFIER | PNP | 0.037A | 8V | ULTRA HIGH FREQUENCY B | MO-220VEED-2 | 5500MHz | 40 | 16 | |||||||||||||||||||||||||||||||||||||||||||||||
| HFA3128R96 | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | Non-RoHS Compliant | EAR99 | LOW NOISE | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | NO LEAD | 240 | 16 | 125°C | NOT SPECIFIED | 5 | Other Transistors | Not Qualified | S-PQCC-N16 | SILICON | SEPARATE, 5 ELEMENTS | AMPLIFIER | PNP | 0.037A | 8V | ULTRA HIGH FREQUENCY B | MO-220VEED-2 | 5500MHz | 40 | 16 | |||||||||||||||||||||||||||||||||||||||||||||||
| HFA3127R96 | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | Non-RoHS Compliant | EAR99 | LOW NOISE | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | NO LEAD | 240 | 16 | 125°C | NOT SPECIFIED | 5 | Other Transistors | Not Qualified | S-PQCC-N16 | SILICON | SEPARATE, 5 ELEMENTS | AMPLIFIER | NPN | 0.037A | 8V | ULTRA HIGH FREQUENCY B | MO-220VEED-2 | 8000MHz | 40 | 16 | |||||||||||||||||||||||||||||||||||||||||||||||
| 2N2857 | Fairchild (ON Semiconductor) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | icon-pbfree no | EAR99 | compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 4 | 200°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-MBCY-W4 | SILICON | SINGLE | AMPLIFIER | NPN | 0.2W | 0.04A | 15V | ULTRA HIGH FREQUENCY B | TO-72 | 1000MHz | 30 | 1pF | 4 | ||||||||||||||||||||||||||||||||||||||||||||||
| MPSH81 | Fairchild (ON Semiconductor) |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.21.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | THROUGH-HOLE | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | AMPLIFIER | PNP | 0.35W | 0.05A | 20V | VERY HIGH FREQUENCY B | TO-92 | 600MHz | 60 | 0.85pF | 3 | ||||||||||||||||||||||||||||||||||||||||||||||
| BFR 92P E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | NPN | 0.28W | 0.03A | 15V | L B | 5000MHz | 70 | 0.6pF | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||
| BFR 193 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | NPN | 0.58W | 0.08A | 12V | ULTRA HIGH FREQUENCY B | 8000MHz | 70 | 1pF | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||
| BFR 182 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | NPN | 0.035A | 12V | ULTRA HIGH FREQUENCY B | 8000MHz | 0.5pF | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA3096BZ | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 | 125°C | -55°C | RoHS Compliant | 2000 | /files/intersil-hfa3096bz-datasheets-9216.pdf | 8V | 65mA | SOIC | 10mm | 1.5mm | 4mm | Lead Free | 16 | 7 Weeks | No SVHC | 16 | yes | EAR99 | No | 8541.21.00.75 | e3 | Matte Tin (Sn) - annealed | NPN, PNP | DUAL | GULL WING | 260 | 16 | 30 | 5 | BIP General Purpose Small Signal | 8 GHz | SEPARATE, 5 ELEMENTS | AMPLIFIER | ULTRA HIGH FREQUENCY B | 150mW | MS-012AC | 8V | 500mV | 8V | 65mA | 8000MHz | 40 | 12V | 5.5V | 5.5GHz | ||||||||||||||||||||||||||||
| HFA3046BZ | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 | 125°C | -55°C | 8GHz | RoHS Compliant | 2000 | /files/intersil-hfa3046bz-datasheets-9112.pdf | 8V | 65mA | SOIC | 8.75mm | 1.5mm | 4mm | Lead Free | 14 | 2 Weeks | 14 | yes | EAR99 | Tin | No | e3 | NPN | DUAL | GULL WING | 260 | 14 | 30 | 150mW | 5 | Other Transistors | 8 GHz | COMPLEX | AMPLIFIER | 65mA | 8GHz | 150mW | MS-012AB | 12V | 500mV | 8V | 65mA | 8000MHz | 40 | 12V | 5.5V | 8GHz | |||||||||||||||||||||||||||
| MRF317 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | Chassis Mount, Screw | 150°C | -65°C | RoHS Compliant | 4 | No | NPN | 270W | 1 | 10 dB | 100W | 35V | 35V | 12A | 65V | 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CM5160 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | RoHS Compliant | 2005 | /files/centralsemiconductor-cm5160-datasheets-9898.pdf | TO-39-3 | Lead Free | 8 Weeks | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | PNP | 3 | 1W | 40V | 400mA | 500MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N2857 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -65°C | RoHS Compliant | 2016 | /files/centralsemiconductor-2n2857-datasheets-8341.pdf | TO-72 | 4 | 12 Weeks | no | EAR99 | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-MBCY-W4 | 1.9 GHz | AMPLIFIER | ULTRA HIGH FREQUENCY B | 200mW | 15V | 15V | 40mA | 1000MHz | 30 | 30V | 2.5V | 30 | 1pF | 1.9GHz | ||||||||||||||||||||||||||||||||||||||
| PN3563 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Non-RoHS Compliant | 2008 | /files/centralsemiconductor-pn3563-datasheets-6486.pdf | TO-226-3 | 3 | 8 Weeks | no | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | AMPLIFIER | NPN | 0.6W | 0.05A | TO-92 | 12V | 600MHz | 20 | 1.7pF | |||||||||||||||||||||||||||||||||||||||||||||
| MRF10005 | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | Chassis Mount, Screw | 200°C | -65°C | RoHS Compliant | 3 | No | NPN | 25W | 1 | 10.3 dB | 25W | 55V | 55V | 1.25mA | 55V | 3.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA3128B | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 | Non-RoHS Compliant | 2000 | /files/intersil-hfa3128b-datasheets-0826.pdf | 12V | 65mA | SOIC | Contains Lead | 16 | 16 | EAR99 | LOW NOISE | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 16 | 30 | 5 | Not Qualified | SILICON | SEPARATE, 5 ELEMENTS | AMPLIFIER | PNP | ULTRA HIGH FREQUENCY B | 150mW | MS-012AC | 15V | 65mA | 5500MHz | 5.5GHz | ||||||||||||||||||||||||||||||||||||||||
| HFA3127RZ | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 2 | 125°C | -55°C | 8GHz | RoHS Compliant | 2000 | /files/intersil-hfa3127rz-datasheets-8846.pdf | QFN EP | 16 | 5 Weeks | 16 | yes | EAR99 | No | 8541.21.00.75 | e3 | Matte Tin (Sn) - annealed | NPN | QUAD | 260 | 16 | 30 | 150mW | 5 | Other Transistors | 8 GHz | SEPARATE, 5 ELEMENTS | AMPLIFIER | 65mA | 8GHz | 150mW | MO-220VEED-2 | 12V | 8V | 65mA | 8000MHz | 40 | 12V | 5.5V | 8GHz | |||||||||||||||||||||||||||||||||||
| 2N5109 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -65°C | RoHS Compliant | 2011 | /files/centralsemiconductor-2n5109-datasheets-8469.pdf | TO-39 | Lead Free | 3 | 8 Weeks | no | EAR99 | 8541.29.00.75 | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | WIRE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Other Transistors | 11 dB | Not Qualified | O-MBCY-W3 | 1.2 GHz | AMPLIFIER | 400mA | 1W | VERY HIGH FREQUENCY B | 1W | 20V | 500mV | 20V | 400mA | 1200MHz | 40V | 3V | 70 | 3.5pF | 1.2GHz | |||||||||||||||||||||||||||||||||
| HFA3128RZ96 | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 2 | 125°C | -55°C | 5.5GHz | RoHS Compliant | 2000 | /files/intersil-hfa3128rz96-datasheets-4017.pdf | QFN EP | 16 | 16 | yes | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Matte Tin (Sn) - annealed | PNP | QUAD | NO LEAD | 260 | 16 | 40 | 150mW | 5 | Other Transistors | Not Qualified | 5.5 GHz | SEPARATE, 5 ELEMENTS | AMPLIFIER | 65mA | 5.5GHz | 150mW | MO-220VEED-2 | 15V | 8V | 65mA | 5500MHz | 40 | 12V | 5.5V | 5.5GHz | ||||||||||||||||||||||||||||||||||
| 2N5770 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | -65°C | RoHS Compliant | 2008 | /files/centralsemiconductor-2n5770-datasheets-2261.pdf | TO-92 | 3 | 8 Weeks | no | EAR99 | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | 900MHz | AMPLIFIER | 50mA | ULTRA HIGH FREQUENCY B | 625mW | 15V | 400mV | 15V | 50mA | 900MHz | 50 | 30V | 3V | 20 | 1.7pF | 900MHz | |||||||||||||||||||||||||||||||||||||
| BFY90 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | RoHS Compliant | 2006 | /files/centralsemiconductor-bfy90-datasheets-9453.pdf | TO-72-4 | Lead Free | 4 | 12 Weeks | no | EAR99 | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | WIRE | NOT SPECIFIED | 4 | 200°C | NOT SPECIFIED | 1 | Other Transistors | 23 dB | Not Qualified | O-MBCY-W4 | SILICON | SINGLE | AMPLIFIER | ULTRA HIGH FREQUENCY B | 200mW | 15V | 25mA | 1300MHz | 1.5pF | 1.4GHz | ||||||||||||||||||||||||||||||||||||||||
| MRF5812R2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | 2004 | /files/microsemi-mrf5812r2-datasheets-9420.pdf | SOIC | 8 | 8 | OBSOLETE (Last Updated: 1 month ago) | EAR99 | No | e0 | TIN LEAD | DUAL | GULL WING | 8 | 1 | Other Transistors | SILICON | SINGLE | AMPLIFIER | NPN | ULTRA HIGH FREQUENCY B | 1.25W | 15V | 200mA | 5000MHz | 50 | 30V | 2pF | ||||||||||||||||||||||||||||||||||||||||||||||
| HFA3128BZ96 | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 | 125°C | -55°C | 5.5GHz | RoHS Compliant | 2000 | /files/intersil-hfa3128bz96-datasheets-5509.pdf | SOIC | 16 | 16 | yes | EAR99 | No | 8541.21.00.75 | e3 | Matte Tin (Sn) - annealed | PNP | DUAL | GULL WING | 260 | 16 | 30 | 150mW | 5 | Other Transistors | 5.5 GHz | SEPARATE, 5 ELEMENTS | AMPLIFIER | 65mA | 5.5GHz | 150mW | MS-012AC | 15V | 8V | 65mA | 5500MHz | 40 | 12V | 5.5V | 5.5GHz | |||||||||||||||||||||||||||||||||||
| 2731-20 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Bulk | 200°C | -65°C | RoHS Compliant | 2004 | /files/microsemi-273120-datasheets-5309.pdf | 32 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 2 | 8.2 dB | 70W | 65V | 65V | 1.85A | 3.1GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2731-100M | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Bulk | 200°C | -65°C | RoHS Compliant | 2004 | /files/microsemi-2731100m-datasheets-4102.pdf | 2 | 12 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS | No | DUAL | FLAT | 2 | 1 | Other Transistors | 9.4 dB | R-CDFM-F2 | SINGLE | BASE | AMPLIFIER | NPN | 3.1GHz | S B | 575W | 65V | 65V | 15A | 3.1GHz | |||||||||||||||||||||||||||||||||||||||||||||
| 2729-125 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Bulk | 200°C | -65°C | RoHS Compliant | 2003 | /files/microsemi-2729125-datasheets-0578.pdf | 32 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 2 | 9.5 dB | 2.9GHz | 350W | 65V | 56V | 15A | 65V | 2.9GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2729-170 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | RoHS Compliant | 2004 | /files/microsemi-2729170-datasheets-9586.pdf | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 3 | 8.6 dB | 570W | 65V | 17A | 2.9GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA3096B96 | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | RoHS Compliant | 2000 | /files/intersil-hfa3096b96-datasheets-9225.pdf | 8V | 65mA | SOIC | Contains Lead | 16 | EAR99 | LOW NOISE | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 150°C | 5 | Not Qualified | R-PDSO-G16 | SILICON | SEPARATE, 5 ELEMENTS | AMPLIFIER | NPN AND PNP | ULTRA HIGH FREQUENCY B | 150mW | MS-012AC | 15V | 65mA | 8000MHz | 40 | 0.5 V | 5.5GHz |
